IRLR3410TRR【PDF 2/11 页】MOSFET N-CH 100V 17A DPAK

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IRLR/U3410

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Conditions

V (BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

––– V V GS = 0V, I D = 250μA

? V (BR)DSS / ? T J

Breakdown Voltage Temp. Coefficient

–––

0.122

–––

V/°C Reference to 25°C, I D = 1mA

–––

–––

0.105 V GS = 10V, I D = 10A ?

––– R G = 6.0 ?, V GS = 5.0V

R DS(on)

V GS(th)

g fs

I DSS

I GSS

Q g

Q gs

Q gd

t d(on)

t r

t d(off)

t f

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

–––

–––

1.0

7.7

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

7.2

53

30

26

0.125 W V GS = 5.0V, I D = 10A ?

0.155 V GS = 4.0V, I D = 9.0A ?

2.0 V V DS = V GS , I D = 250μA

––– S V DS = 25V, I D = 9.0A ?

25 V DS = 100V, V GS = 0V

μA

250 V DS = 80V, V GS = 0V, T J = 150°C

100 V GS = 16V

nA

-100 V GS = -16V

34 I D = 9.0A

4.8 nC V DS = 80V

20 V GS = 5.0V, See Fig. 6 and 13 ??

––– V DD = 50V

––– I D = 9.0A

ns

––– R D = 5.5 ?, See Fig. 10 ??

L D

Internal Drain Inductance

–––

4.5

–––

nH

Between lead,

6mm (0.25in.)

D

L S

Internal Source Inductance

–––

7.5

–––

from package

and center of die contact ?

G

S

C iss

C oss

C rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

–––

–––

–––

800

160

90

––– V GS = 0V

––– pF V DS = 25V

––– ? = 1.0MHz, See Fig. 5 ?

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I S

I SM

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) ??

––– –––

––– –––

17

60

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

G

D

S

V SD

t rr

Q rr

t on

Notes:

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– ––– 1.3 V T J = 25°C, I S = 9.0A, V GS = 0V ?

––– 140 210 ns T J = 25°C, I F =9.0A

––– 740 1100 nC di/dt = 100A/μs ??

Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )

? Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

? V DD = 25V, starting T J = 25°C, L = 3.1mH

R G = 25 ? , I AS = 9.0A. (See Figure 12)

? Pulse width ≤ 300μs; duty cycle ≤ 2%

? Uses IRL530N data and test conditions

? I SD ≤ 9.0A, di/dt ≤ 540A/μs, V DD ≤ V (BR)DSS , ? This is applied for I-PAK, L S of D-PAK is measured between lead and

T J ≤ 175°C center of die contact

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

2

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